leshan radio company, ltd. s-lnta7002nt1g sc-89 10000/tape&reel ordering information small signal mosfet 30 v, 154 ma, single, n?channel, gate esd protection, sc?89 features ? low gate charge for fast switching ? small 1.6 x 1.6 mm footprint ? esd protected gate ? applications ? power management load switch ? level shift ? portable applications such as cell phones, media players, digital cameras, pda's, video games, hand held computers, etc. we declare that the material of product is rohs compliant and halogen free. device shipping 3000/tape&reel lnta7002nt1g lnta7002nt3g marking marking diagram t6 = specific device code m = month code t 6 m 1 3 2 (top view) drain gate 3 1 2 source maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source voltage v dss 30 v gate?to?source voltage v gs 10 v continuous drain current (note 1) steady state = 25 c i d 154 ma power dissipation (note 1) steady state = 25 c p d 300 mw pulsed drain current t p 10 s i dm 618 ma operating junction and storage temperature t j , t stg ?55 to 150 c continuous source current (body diode) i sd 154 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 1) r ja 416 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). t6 t6 esd protected:1500v esd protected:2000v ? rev .o 1/5 lnta7002nt1g esd protected:1500v ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lnta7002nt1g s-lnta7002nt3g
leshan radio company, ltd. lnta7002nt1g , s-lnta7002nt1g electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 30 v zero gate voltage drain current i dss v gs = 0 v, v ds = 30 v 1.0 a zero gate voltage drain current i dss v gs = 0 v, v ds = 20 v, t = 85 c 1.0 a gate?to?source leakage current i gss v ds = 0 v, v gs = 10 v 25 a gate?to?source leakage current i gss v ds = 0 v, v gs = 5 v 1.0 a gate?to?source leakage current i gss v ds = 0 v, v gs = 5 v t = 85 c 1.0 a on characteristics (note 2) gate threshold voltage v gs(th) v ds = v gs , i d = 100 a 0.5 1.0 1.5 v drain?to?source on resistance r ds(on) v gs = 4.5 v, i d = 154 ma 1.4 7.0 v gs = 2.5 v, i d = 154 ma 2.3 7.5 forward transconductance g fs v ds = 3 v, i d = 154 ma 80 ms capacitances input capacitance c iss v ds = 5.0 v, f = 1 mhz, v gs = 0 v 11.5 pf output capacitance c oss 10 reverse transfer capacitance c rss 3.5 switching characteristics (note 3) turn?on delay time t d(on) v gs = 4.5 v, v ds = 5.0 v, i d = 75 ma, r g = 10 13 ns rise time t r 15 ns turn?off delay time t d(off) 98 fall time t f 60 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 0.154 ma 0.77 0.9 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. rev .o 2/5
leshan radio company, ltd. typical performance curves t j = 125 c 0 0.16 1.6 0.4 v ds , drain?to?source voltage (volts) i d, drain current (amps) 0.12 0.04 0 figure 1. on?region characteristics 0.6 1.4 2 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) 1 2 0.5 figure 3. on?resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage ?50 0 ?25 25 1 0.2 0 50 150 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.05 t j = ?55 c t j = 125 c 75 t j = 25 c i d = 0.15 a v gs = 4.5 v r ds(on), drain?to?source resistance (normalized) t j = 25 c r ds(on), drain?to?source resistance ( ) 1.2 v gs = 2.5 v 0 0.15 1 25 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) 15 v gs = 0 v i dss , leakage (na) t j = 150 c t j = 125 c v gs = 4.5 v 10 100 2 v v ds = 5 v 20 1.4 v 0.08 1.2 v 0.1 3 0 0.2 0.18 v gs = 10 v 2.5 125 100 0 2.0 10 5 1.2 0.8 1.2 1.5 0.2 v gs = 4.5 v t j = 25 c t j = ?55 c i d, drain current (amps) 2 1000 5 v 2.4 v 1.8 1 1 2 0.5 0.05 0 0.15 0.1 2.5 1.5 0. 2 0.4 1.4 0.6 1.6 0.8 1.8 0.14 0.1 0.02 0.06 2.8 v 0.16 0.12 0.04 0 0.08 0.2 0.8 1.6 rev .o 3/5 lnta7002nt1g , s-lnta7002nt1g
leshan radio company, ltd. typical performance curves figure 7. capacitance variation 0.02 0 v sd , source?to?drain voltage (volts) figure 8. resistive switching time variation vs. gate resistance i s , source current (amps) v gs = 0 v t j = 25 c 0.16 0.5 0.65 figure 9. diode forward voltage vs. current 0.8 0.6 0.08 0.06 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) 5 10 0 5 10 5 t j = 25 c c iss c oss c rss 15 0 20 c iss c rss v ds = 0 v v gs = 0 v v ds v gs r g , gate resistance (ohms) 1 10 100 100 10 t, time (ns) v dd = 5.0 v i d = 75 ma v gs = 4.5 v t r t d(on) 1000 t f t d(off) 1 0.04 25 0.7 0.55 10 15 0.14 20 0.12 0.1 0.75 rev .o 4/5 lnta7002nt1g , s-lnta7002nt1g
leshan radio company, ltd. notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89 rev .o 5/5 lnta7002nt1g , s-lnta7002nt1g
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